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PMP23126 Design Specification | |
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Vin (Min) (V) | 350 |
Vin (Max) (V) | 410 |
Vout (Nom) (V) | 12 |
Iout (Max) (A) | 250 |
Output Power (W) | 3000 |
Isolated/Non-Isolated | Isolated |
Input Type | DC |
Topology | Full Bridge - Phase Shifted |
This reference design is a GaN-based 3kW phase-shifted full bridge (PSFB) targeting maximum power density.
The design has an active clamp to minimize voltage stress on the secondary synchronous rectifier MOSFETs enabling use of lower voltage-rating MOSFETs with better figure-of-merit (FoM). PMP23126 uses our 30mΩ GaN on the primary side and silicon MOSFETs on the secondary side. The LMG3522 top-side cooled GaN with integrated driver and protection enables higher efficiency by maintaining ZVS over a wider range of operation compared to Si MOSFET. The PSFB operates at 100 kHz and achieves a peak efficiency of 97.74%.
This design can be run on a C2000™ TMS320F280039C or TMS320F280049C or TMS320F2800157 real-time MCU.
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PMP23126 EVM Board | ![]()
C2000 MCU interface to PCMC PSFB DC/DC Power Stage Diagram |
Useful links regarding the reference design are provided below:
Shown below lists all the software revision history for this reference design:
Software Revision | In SDK Release | Changelog |
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v1.00.00 | 4.02.00.00 | First release, on F28004x devices in C2000Ware Digital Power SDK |
v1.01.00 | 4.03.00.00 | Bug fixes & Enhancements:
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v2.00.00 | 4.04.00.00 | New device support:
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v3.00.00 | 5.03.00.00 | New device support & Enhancements:
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v3.00.01 | 5.04.00.00 | Changes & Enhancements:
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For EVM design files such as schematics, BOM, PCB layouts & assembly files, please visit TI design webpage from the link above.
For additional help and support, please visit E2E™ design support forum